Critical Buckling Load of SiCNTs: A Molecular Dynamics Study on Gas Sensing

Silicon carbide nanotube (SiCNT) come forward in the great variety of nanotubes with higher durability until 1600 oC (in air) while carbon can stay stable 600 air). First five buckling loads single SiCNT placed between source and drain metal electrodes nano sized field effect transistors (FET) is investigated using two different molecular dynamics methods. L.A.M.M.P.S. software Gromacs package used to perform analyzes. Armchair structure chiralities (10,0), (12, 0), (14, (16, 0) were selected 400, 480, 560, 640 atoms respectively. Results demonstrate clearly that longest lower stability as becomes fragile more atom numbers. Except from (10, armchair SiCNT, first mode occurs at lowest load rise number arise.